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| MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features http://onsemi.com * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter * * * Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes Pb-Free Packages are Available* TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to +125C, Sine Wave 50 to 60 Hz, Gate Open) MAC212A8 MAC212A10 On-State RMS Current (TC = +85C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +25C) Preceded and followed by rated current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +85C, Pulse Width = 10 ms) Average Gate Power (TC = +85C, t = 8.3 ms) Peak Gate Current (TC = +85C, Pulse Width = 10 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 12 100 A A Value Unit V TO-220AB CASE 221A-07 STYLE 4 x A Y WW G = 8 or 10 = Assembly Location = Year = Work Week = Pb-Free Package MAC212AxG AYWW 1 2 3 I2t PGM PG(AV) IGM TJ Tstg 40 20 0.35 2.0 -40 to +125 -40 to +150 A2s W PIN ASSIGNMENT W A C C 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device MAC212A8D MAC212A8DG MAC212A10 MAC212A10G Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 Preferred devices are recommended choices for future use and best overall value. 1 December, 2005 - Rev. 2 Publication Order Number: MAC212A8/D MAC212A8, MAC212A10 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, r Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 2.0 62.5 260 Unit C/W C Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = +125C IDRM, IRRM - - - - 10 2.0 mA mA Symbol Min Typ Max Unit ON CHARACTERISTICS Peak On-State Voltage ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2% Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Non-Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125C) All Four Quadrants Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85C) dv/dt(c) - 5.0 - V/ms VTM IGT - - - - VGT - - - - VGD 0.2 IH - - 6.0 - 50 mA 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 V 12 12 20 35 50 50 50 75 V - 1.3 1.75 V mA tgt - 1.5 - ms dv/dt - 100 - V/ms http://onsemi.com 2 MAC212A8, MAC212A10 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC212A8, MAC212A10 TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) PD(AV), AVERAGE POWER DISSIPATION (WATT) 125 28 24 20 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 12 14 = CONDUCTION ANGLE dc = 180 90 60 30 115 = 30 85 = CONDUCTION ANGLE 60 90 180 dc 105 95 75 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation 100 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 50 20 10 5.0 TJ = 25C TJ = 125C 100 ITSM , PEAK SURGE CURRENT (AMP) 80 60 40 CYCLE TC = 70C f = 60 Hz Surge is preceded and followed by rated current 2.0 3.0 NUMBER OF CYCLES 5.0 7.0 10 20 0 1.0 2.0 1.0 0.5 0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. Maximum Non-Repetitive Surge Current VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2.0 1.6 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS Figure 3. Maximum On-State Voltage Characteristics 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 TC, CASE TEMPERATURE (C) Figure 5. Typical Gate Trigger Voltage http://onsemi.com 4 MAC212A8, MAC212A10 I GT, GATE TRIGGER CURRENT (NORMALIZED) 2.0 IH , HOLDING CURRENT (NORMALIZED) MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C) Figure 6. Typical Gate Trigger Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 7. Typical Holding Current 1.0 0.5 0.2 ZqJC(t) = r(t) * RqJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 8. Thermal Response http://onsemi.com 5 MAC212A8, MAC212A10 PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE AA -T- B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MAC212A8/D |
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